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| Low Voltage Bias Stabilizer with Enable MDC5001T1 SILICON SMALLBLOCKTM * Maintains Stable Bias Current in N-Type Discrete Bipolar Junction and Field Effect Transistors * Provides Stable Bias Using a Single Component Without Use of Emitter Ballast and Bypass Components * Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc * Reduces Bias Current Variation Due to Temperature and Unit-to-Unit Parametric Changes * Consumes <0.5 mW at V CC = 2.75 V * Active High Enable is CMOS Compatible This device provides a reference voltage and acts as a DC feedback element around an external discrete, NPN BJT or N-Channel FET. It allows the external transistor to have its emitter/source directly grounded and still operate with a stable collector/drain DC current. It is primarily intended to stabilize the bias of discrete RF stages operating from a low voltage regulated supply, but can also be used to stabilize the bias current of any linear stage in order to eliminate emitter/source bypassing and achieve tighter bias regulation over temperature and unit variations. The "ENABLE" polarity nulls internal current, Enable current, and RF transistor current in "STANDBY." This device is intended to replace a circuit of three to six discrete components. The combination of low supply voltage, low quiescent current drain, and small package make the MDC5001T1 ideal for portable communications applications such as: * Cellular Telephones * Pagers * PCN/PCS Portables * GPS Receivers * PCMCIA RF Modems * Cordless Phones * Broadband and Multiband Transceivers and Other Portable Wireless Products. INTERNAL CIRCUIT DIAGRAM 1 2 3 INTEGRATED CIRCUIT 6 5 4 SOT-363 CASE 419B-01 STYLE 19 MDC5001T-1/10 MDC5001T1 MAXIMUM RATINGS Rating Power Supply Voltage Ambient Operating Temperature Range Storage Temperature Range Junction Temperature Collector Emitter Voltage (Q2) Enable Voltage (Pin 5) THERMAL CHARACTERISTICS Characteristic Total Device Power Dissipation (FR-5 PCB of 1, x 0.75, x 0.062,, T A = 25C) Derate above 25C Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Symbol Recommended Operating Supply Voltage Power Supply Current (V CC = 2.75 V) V ref , I out are unterminated See Figure 8 Q2 Collector Emitter Breakdown Voltage (I C2 = 10 A, I B2 = 0) Reference Voltage (V ENBL = V CC = 2.75 V, V out = 0.7 V) (I out = 30 A) (I out = 150 A) See Figure 1 Reference Voltage (V ENBL = V -40C < T A <+85C) CC Symbol V CC TA T stg TJ V CEO V ENBL Value 15 -40 to +85 -65 to +150 150 -15 V CC Unit V dc C C C V V Symbol PD Max 150 1.2 Unit mW mW/C C/W R JA 833 Min 1.8 -- Typ 2.75 130 Max 10 200 Unit Volts mA V CC I CC V (BR)CEO2 V ref 15 Volts Volts 2.050 2.110 2.075 2.135 2.100 2.160 = 2.75 V, V out = 0.7 V, Vref 5.0 15 25 10 30 50 mV V CC Pulse Width = 10 mS, Duty Cycle = 1% (I out = 10 A) (I out = 30 A) (I out = 100 A) See Figures 2 and 11 MDC5001T-2/10 MDC5001T1 The following SPICE models are provided as a convenience to the user and every effort has been ade to insure their accuracy. However, no responsibility for their accuracy is assumed by ON Semiconductor. .MODEL Q4 NPN BF = 136 BR = 0.2 CJC = 318.6 f CJE = 569.2 f CJS = 1.9 p EG = 1.215 FC = 0.5 IKF = 24.41 m IKR = 0.25 IRB = 0.0004 IS = 256E-18 ISC = 1 f ISE = 500E-18 ITF = 0.9018 MJC = 0.2161 MJE = 0.3373 MJS = 0.13 NC = 1.09 NE = 1.6 NF = 1.005 RB = 140 RBM = 70 RC = 180 RE = 1.6 TF = 553.6 p TR = 10 n VAF = 267.6 VAR = 12 VJC = 0.4172 VJE = 0.7245 VJS = 0.39 VTF = 10 XTB = 1.5 XTF = 2.077 XTI = 3 .MODEL Q1, Q2 PNP BF = 87 BR = 0.6 CJC = 800E-15 CJE = 46E-15 EG = 1.215 FC = 0.5 IKF = 3.8E-04 IKR = 2.0 IRB = 0.9E-3 IS = 1.027E-15 ISC = 10E-18 ISE = 1.8E-15 ITF = 2E-3 MJC = 0.2161 MJE = 0.2161 NC = 0.8 NE = 1.38 NF = 1.015 NK = 0.5 NR = 1.0 RB = 720 RBM = 470 RC = 180 RE = 26 TF = 15E-9 TR = 50E-09 VAF = 54.93 VAR = 20 VAR = 20 VJC = 0.4172 VJE = 0.4172 VTF = 10 XTB = 1.5 XTF = 2.0 XTI = 3 RESISTOR VALUES R 1 = 12 K R 2= 6 K R 3 = 3.4 K R 4 = 12 K R 5 = 20 K R 6 = 40 K These models can be retrieved electronically by accessing the ON Semiconductor Web page at http://design-net.sps.mot.com/models and searching the section on SMALLBLOCKE models MDC5001T-3/10 MDC5001T1 TYPICAL OPEN LOOP CHARACTERISTICS 8 7 6 5 V ref( V dc) 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 V CC, SUPPLY VOLTAGE (V dc) Figure 1. V ref versus V CC @ I out MDC5001T-4/10 MDC5001T1 TYPICAL OPEN LOOP CHARACTERISTICS (Refer to Circuits of Figures 10 through 15) 50 900 30 I CC, SUPPLY CURRENT (Adc) 40 800 700 600 500 400 300 200 100 0 V ref (mA) 20 10 0 -10 -20 -30 -40 -50 -45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 0 1 2 3 4 5 6 7 8 9 10 T J , JUNCTION TEMPERATURE (C) Figure 2. V ref versus T J @ I out 1000 160 140 120 V CC , SUPPLY VOLTAGE (V dc) Figure 3. I CC versus V CC @ T J H FE , Q2 DC CURRENT GAIN 500 300 200 I ENABLE(Adc) 100 80 60 40 20 100 50 30 20 10 10 20 30 50 100 200 300 500 1000 0 0 0.5 1.0 1.5 2.0 2.5 3.0 I out , DC OUTPUT CURRENT (Adc) Figure 4. Q2 Current Gain versus Output Current @ T J 6.0 V ENABLE (V dc) Figure 5. I enable versus V enable 5.0 4.0 V ref (Vdc) 3.0 2.0 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V ENABLE (V dc) Figure 6. V ref versus V enable @ V CC and I out MDC5001T-5/10 MDC5001T1 TYPICAL CLOSED LOOP PERFORMANCE (Refer to Circuits of Figures 16 & 17) 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 4.0 3.0 2.0 V ref (%) I C3 (%) 1.0 0 -1.0 -2.0 -3.0 0 50 100 150 200 250 300 T A , AMBIENT TEMPERATURE (C) Figure 7. I C3 versus T A @ I C3 EXTERNAL TRANSISTOR DC BETA @ I C3 Figure 8. V ref versus External Transistor DC Beta @ I C3 10 5.0 0 I C3 (%) -5.0 -10 -15 0 50 100 150 200 250 300 H FE , EXTERNAL TRANSISTOR DC BETA Figure 9. I C3 versus External Transistor DC Beta @ I C3 MDC5001T-6/10 MDC5001T1 OPEN LOOP TEST CIRCUITS Figure 10. I CC versus V CC Test Circuit Figure 11. V ref versus V CC Test Circuit Figure 12. V ref versus T J Test Circuit Figure 13. H FE versus I out Test Circuit Figure 14. I ENBL versus V ENBL Test Circuit Figure 15. V ref versus V ENBL Test Circuit NOTE 1: V BE3 is used to simulate actual operating conditions that reduce V CE2 & H FE2 , and increase I B2 & V ref . MDC5001T-7/10 MDC5001T1 CLOSED LOOP TEST CIRCUITS Figure 17. RF Stage I C3 versus T A Test Circuit MDC5001T-8/10 MDC5001T1 APPLICATION CIRCUITS RF OUT Step 1: Choose V CC (1.8 V Min to 10 V Max) Step 2: Insure that Min V ENBL is . minimum indicated in Figures 5 and 6. Step 3: Choose bias current, I C3 , and calculate needed I out from typ H FE3 Step 4: From Figure 1, read V ref for V CC and I out calculated. * Step 5: Calculate Nominal R5 = (V CC - V ref ) - (I C3 + I out ). Tweak as desired. * Figure 18. Class A Biasing of a Typical 900 MHz BJT Amplifier Application MDC5001T-9/10 MDC5001T1 APPLICATION CIRCUITS RF OUT Step 1: Choose V CC (1.8 V Min to 10 V Max) Step 2: Insure that Min V ENBL is > minimum indicated in Figures 5 and 6. Step 3: Choose bias current, I D , and determine needed gate-source voltage, V GS . Step 4: Choose I out keeping in mind that too large an I out can impair MDC5000 V ref /T J performance (Figure 2) but too large an R6 can cause I DGO & I GSO to bias on the FET. * Step 5: Calculate R6 = (V GS + E GS ) - I out * Step 6: From Figure 1, read V ref for V CC & I out chosen * Step 7: Calculate Nominal R5 = (V CC - V ref ) - (I D + I out) . Tweak as desired. * Figure 19. Class A Biasing of a Typical 890 MHz Depletion Mode GaAs FET Amplifier MDC5001T-10/10 |
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